[Seminar] 2013, MSE Special Seminar, Prof. Jung-Hee Lee
[Seminar] 2013, MSE Special Seminar, Prof. Jung-Hee Lee |
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MSE special seminar - Prof. Jung-Hee Lee (Kyungpook National University)
Title: High-Performance GaN-based Nanochannel FinFETs With/Without AlGaN/GaN Heterostructure
Gallium nitride (GaN) is very promising material for high voltage and frequency operation due to superior material properties such as large band-gap, high critical electric field, and high saturation electron velocity. Recently, nanochannel fin-shaped field-effect transistors (FinFETs) with AlGaN/GaN heterojunction have been fabricated, competing with Si FinFETs and GaAs FinFETs. The GaN-based FinFETs have better gate controllability, due to 3-dimensional non-planar structure, which increases on-state performance while also improving the off-state characteristics. This work combines and adapts to GaN two recent technologies initially developed for Si CMOS: FinFETs and junctionless transistors (JLT). We have fabricated, characterized and compared two different types of GaN FinFETs, one with AlGaN/GaN heterostructure (2DEG) and the other with heavily doped heterojunction-free GaN layer. The threshold voltages of both devices shift toward positive direction from large negative value as the fin width (Wfin) decreases. Both devices exhibit high on-state performance. The heterojunction-free GaN FinFETs show superior off-state performance because the current flows through the volume of the GaN channel layer which can be fully depleted. The proposed GaN nanochannel FinFETs are very promising candidates not only for high performance, but also for high power applications.
Jung-Hee Lee received B.S. and M.S. from Kyungpook National University in 1979 and 1983, respectively; a M.S. in Electrical and Computer Engineering in 1986 from Florida Institute of Technology; and a Ph.D. degree in Electrical and Computer Engineering in 1990 from North Carolina State University.
From 1990 to 1993, he was with the Compound Semiconductor Research Group, Electronics and Telecommunication Research Institute, Daejeon, Korea. Since 1993, he has been a Professor with the School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu. He has authored/coauthored over 200 journal publications, over 250 conference proceedings, and more than 20 patents (including U.S. patents). His current research is focused on the growth of nitride-based epitaxy, the fabrication and characterization of gallium-nitride-based electronic and optoelectronic devices, atomic layer epitaxy for metal-oxide-semiconductor application, and characterizations and analyses for the 3-D devices such as fin-shaped FETs.
Prof. Lee is currently the Dean of IT College; the Vice President of Korean Optoelectronics Society; the Head of Graduate school of Electrical engineering and Computer science; He also created the National Education Center for Semiconductor Technology (NECST).